Ion Beam Milling Device "scia Mill 150/200"
Supports wafers up to 150 or 200 mm! Etching angle and stage tilt/rotation mechanism.
The "scia Mill 150/200" is an ion beam milling device with a microwave ECR source (218mm diameter). The processes include ion beam etching/milling (IBE/IBM), reactive ion beam etching (RIBE), and chemical assist ion beam etching (CAIBE). Please feel free to consult us when needed. 【Features】 ■ Compatible with maximum 150 or 200mm wafer substrates ■ Microwave ECR source (218mm diameter) ■ RF type source (350mm diameter) ■ Etching angle and stage tilt/rotation mechanism *For more details, please refer to the PDF materials or feel free to contact us.
- Company：ハイテック・システムズ
- Price：Other
